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AON7426
Electrical Characteristics (T J =25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV DSS
I DSS
I GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
I D =250 μ A, V GS =0V
V DS =30V, V GS =0V
V DS =0V, V GS =±20V
T J =55°C
30
36
1
5
10
V
μ A
μ A
V GS(th)
I D(ON)
R DS(ON)
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V DS =V GS ， I D =250 μ A
V GS =10V, V DS =5V
V GS =10V, I D =18A
T J =125°C
1.35
130
1.85
4.5
7.2
2.35
5.5
8.8
V
A
m ?
V GS =4.5V, I D =14A
5.8
8
m ?
g FS
Forward Transconductance
V DS =5V, I D =18A
75
S
V SD
Diode Forward Voltage
I S =1A,V GS =0V
0.7
1
V
I S
Maximum Body-Diode Continuous Current
35
A
DYNAMIC PARAMETERS
C iss
Input Capacitance
1410
1765
2120
pF
C oss
C rss
R g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V GS =0V, V DS =15V, f=1MHz
V GS =0V, V DS =0V, f=1MHz
195
90
1.3
283
155
2.6
370
220
3.9
pF
pF
?
SWITCHING PARAMETERS
Q g (10V)
Total Gate Charge
26
33
40
nC
Q g (4.5V) Total Gate Charge
Q gs Gate Source Charge
Q gd
Gate Drain Charge
t D(on)
Turn-On DelayTime
t r
Turn-On Rise Time
t D(off)
Turn-Off DelayTime
t f
Turn-Off Fall Time
V GS =10V, V DS =15V, I D =18A
V GS =10V, V DS =15V, R L =0.83 ? ,
R GEN =3 ?
12.5
16
5.2
6.2
6
4
33
7.5
19.5
nC
nC
nC
ns
ns
ns
ns
t rr
Body Diode Reverse Recovery Time
I F =18A, dI/dt=500A/ μ s
9.5
12.3
15
ns
Q rr
Body Diode Reverse Recovery Charge I F =18A, dI/dt=500A/ μ s
20
25
30
nC
A. The value of R θ JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 ° C. The
Power dissipation P DSM is based on R θ JA t ≤ 10s value and the maximum allowed junction temperature of 150 ° C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150 ° C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX) =150 ° C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150 ° C. Ratings are based on low frequency and duty cycles to keep
initial T J =25 ° C.
D. The R θ JA is the sum of the thermal impedance from junction to case R θ JC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 μ s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T J(MAX) =150 ° C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 ° C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev. 2.0: March 2013
www.aosmd.com
Page 2 of 6
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